Samsung Semiconductor - K4A4G165WE-BITD

KEY Part #: K7359585

[25904Stock Ngahau]


    Te waahanga waahanga:
    K4A4G165WE-BITD
    Kaihanga:
    Samsung Semiconductor
    Whakaahuatanga Taipitopito:
    4 Gb 256M x 16 2666 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.
    Ko te wa kaiarahi paerewa a te kaihanga:
    I roto i te taonga
    Te whare noho:
    Kotahi Tau
    Chip Mai:
    Hong Kong
    RoHS:
    Te tikanga utu:
    Te ara kaipuke:
    Ngā Kāwai Whānau:
    KEY Components Co, Ko te LTD he Kaiwhakarite Taonga Hiko e tuku ana i nga waahanga hua tae atu ki: LPDDR4X, MODULE, GDDR5, HBM Aquabolt, DDR3, GDDR6, DDR4 and LPDDR4 ...
    Whakapai Tinana:
    He tohunga taatau ki nga waahanga hiko Samsung Semiconductor K4A4G165WE-BITD. Ka taea te tukuna K4A4G165WE-BITD i roto i nga haora 24 i muri o te ota. Mena kei a koe nga tono mo K4A4G165WE-BITD, Tena, tukuna mai he Tono mo te Whakahuahia ki konei me tuku mai ranei he imeera: info@key-components.com

    K4A4G165WE-BITD Nga Hua Hua

    Te waahanga waahanga : K4A4G165WE-BITD
    Kaihanga : Samsung Semiconductor
    Whakaahuatanga : 4 Gb 256M x 16 2666 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production
    Toa : DDR4
    kiato : 4 Gb
    Org. : 256M x 16
    tere : 2666 Mbps
    ngaohiko : 1.2 V
    Temp. : -40 ~ 95 °C
    mōkī : 96FBGA
    Tūnga hua : Mass Production

    Kia Korero Ma Te Korero
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.